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DIASEMI | Diamond Semiconductor Technology for High-Power and High-Frequency Electronics

DIASEMI | Diamond Semiconductor Technology for High-Power and High-Frequency Electronics

DIASEMI is developing diamond semiconductor technologies for the next generation of high-power, high-frequency, RF, mmWave, sub-THz and THz electronics.

Diamond combines an exceptional set of material properties—including ultra-high thermal conductivity, ultra-wide bandgap, high breakdown field, high carrier transport capability, and extreme thermal and chemical stability—making it a uniquely attractive platform for electronics operating at high power density and high frequency.

Diamond: A New Materials Platform for High-Power Electronics

Diamond offers a combination of properties that directly addresses the fundamental limitations of conventional semiconductor technologies.

  • Thermal conductivity: up to ~2,300 W/m·K

  • Bandgap: ~5.47 eV

  • Breakdown field: theoretically ~10 MV/cm

  • Optical phonon energy: ~160 meV

  • Very low thermal expansion

  • High carrier mobility and saturation velocity

  • Excellent high-temperature and radiation stability

The combination of high breakdown strength and extreme thermal conductivity is particularly important for high-power electronics. It enables higher power density while providing an efficient thermal path for removing heat from active devices.

DIASEMI GaN-on-Diamond Technology

One of DIASEMI's key technology directions is GaN-on-Diamond, targeting the thermal bottleneck in high-power RF and microwave electronics.

GaN provides high-frequency and high-power semiconductor performance, while diamond provides an exceptionally efficient thermal pathway beneath the active device.

GaN + Diamond = High-Frequency Power + Extreme Thermal Management

This architecture is designed to reduce device thermal resistance and junction temperature while enabling higher RF power density, improved efficiency, and enhanced long-term reliability.

Potential applications include:

  • RF power amplifiers

  • Radar and electronic warfare

  • Satellite communications

  • 5G/6G infrastructure

  • High-power microwave systems

  • Aerospace and defense electronics

Diamond for mmWave, sub-THz and THz Electronics

As electronic systems move toward mmWave, sub-THz and THz frequencies, thermal management and high-field carrier transport become increasingly critical.

DIASEMI is exploring diamond-based technologies for:

High-frequency transistors · RF/mmWave power devices · high-speed diodes · plasma-wave electronics · sub-THz/THz devices

Diamond's combination of wide bandgap, high breakdown field, high carrier transport capability and extreme thermal conductivity provides a foundation for high-power operation at frequencies where conventional materials face increasing thermal and electrical limitations.

Diamond for High-Power Microwave Components

Beyond active semiconductor devices, diamond can serve as a critical material for high-power microwave systems.

High-power microwave windows

High-purity CVD diamond combines low microwave loss, high thermal conductivity, high mechanical strength and high-temperature stability, making it attractive for microwave windows in high-power microwave sources, fusion systems and gyrotron technologies.

High-frequency and high-Q structures

Low dielectric loss, thermal stability and high thermal conductivity make high-purity diamond attractive for advanced RF, microwave and millimeter-wave dielectric and resonant structures.

DIASEMI Technology Platform

DIASEMI's technology strategy is centered on integrating diamond materials, semiconductor interfaces and thermal engineering into a unified platform:

Diamond Materials → Interface Engineering → Thermal Management → High-Power Devices → RF/mmWave → sub-THz/THz Electronics

The objective is to move diamond beyond its traditional role as an ultra-hard material and establish it as a next-generation electronic material for extreme power density and high-frequency operation.

DIASEMI Vision

Diamond is not simply a better heat spreader. It is a materials platform for pushing the limits of power density, frequency and operating temperature.

DIASEMI is engineering that platform for the next generation of high-power and high-frequency electronics.